Diffusion barriers comprising a self-assembled monolayer
Computer Chip Mfging\Semi Conductor Tech, Material Sciences\Engineering, Membrane Systems Organic\In-Organic, Nanotechnology & Science
A near-zero thickness self-assembled monolayer (SAM) diffusion barrier which serves to inhibit the diffusion of copper into the surrounding layers during chip manufacturing. The diffusion barrier film created by the researchers show ranges between 2 and 5 nm and contain an aromatic chain to its terminal branch to aid in the conglomerating between the copper, SAM, and low K films respectively. The present invention provides a method for forming a diffusion barrier layer and a diffusion barrier in an integrated circuit. The method for forming a diffusion barrier involves the following steps: 1) preparing a silicon substrate; 2) contacting the silicon substrate with a compisition comprising self-assembled monolayer subunits and a solvent; and 3) removing the solvent. The diffusion barrier layer includes a self-assembled monolayer, and the diffusion layer in the integrated circuit is covalently attached to the silicon substrate and includes a self-assembled monolayer. US Patent 7,202,159 available for non-exclusive license.
• Kaushik Chanda
• Ahila Krishnamoorthy
• Shyam Murarka
• Ganapathiraman Ramanath
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